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Influence of high dielectric HfO2 thin films on the electrical properties of Al/HfO2/n-Si (MIS) structured Schottky barrier diodes

P. Harishsenthil, J. Chandrasekaran, R. Marnadu, P. Balraju, C. Mahendran

2020Physica B Condensed Matter38 citationsDOI

Topics & Concepts

Materials scienceSchottky barrierDielectricSubstrate (aquarium)Amorphous solidDiodeSchottky diodeOptoelectronicsMonoclinic crystal systemBand gapThin filmSemiconductorBarrier layerLayer (electronics)Phase (matter)NanotechnologyCrystallographyCrystal structureGeologyOceanographyOrganic chemistryChemistrySemiconductor materials and devicesSemiconductor materials and interfacesIntegrated Circuits and Semiconductor Failure Analysis
Influence of high dielectric HfO2 thin films on the electrical properties of Al/HfO2/n-Si (MIS) structured Schottky barrier diodes | Litcius