Band alignment and electronic structure of β-Ga2O3 (−201) grown on Si- and C-faces of 4H–SiC substrates
Bei Xu, Jichao Hu, Qi Zhang, Xiaomin He, Xi Wang, Yao Li, Chao Zhang, Linpeng Dong, Hongbin Pu
Topics & Concepts
Materials scienceOptoelectronicsCrystallographyChemistryGa2O3 and related materialsAdvanced Photocatalysis TechniquesElectronic and Structural Properties of Oxides