Improved-Performance Diamond Schottky Barrier Diode With Tin Oxide Interlayer
Shumiao Zhang, Juan Wang, Qi Li, Guoqing Shao, Genqiang Chen, Shi He, Ruozheng Wang, Wei Wang, Renan Bu, Feng Wen, Hongxing Wang
Abstract
A SnO2 thin layer was deposited between the diamond and Schottky electrode to fabricate the metal–insulator–semiconductor Schottky barrier diode (MIS-SBD). The current–voltage and current–voltage–temperature characteristics in the range from 25 °C to 150 °C of diamond SBD were investigated. The Schottky barrier height of MIS-SBD is 1.84 eV. Compared with metal–semiconductor (MS) SBD, the diamond MIS-SBD shows more stable values of barrier height and ideality factor as temperature increased. The difference in interface states density between MIS-SBD and MS-SBD is almost 2 orders of magnitude, and the breakdown voltage was increased from 102 to 123 V after introducing SnO2 layer. These results indicate that the MIS-SBD with SnO2 insulating layer shows a better performance.