Postmetallization “Passivated Edge Technology” for Separated Silicon Solar Cells
Puzant Baliozian, Mohammad Al-Akash, Elmar Lohmüller, Armin Richter, Tobias Fellmeth, Anna Münzer, Nico Wöhrle, Pierre Saint‐Cast, Hannah Stolzenburg, Alma Spribille, R. Preu
Abstract
This article introduces a postmetallization “passivated edge technology” (PET) treatment for separated silicon solar cells consisting of aluminum oxide deposition with subsequent annealing. We present our work on bifacial shingle solar cells that are based on the passivated emitter and rear cell concept. To separate the shingle devices after metallization and firing, we use either a conventional laser scribing mechanical cleaving (LSMC) process or a thermal laser separation (TLS) process. Both separation processes show similar pseudo fill factor (pFF) drops of - 1.2% <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">abs</sub> from the host wafer to the separated state. The pFF of the TLSseparated cells increases by up to +0.7% <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">abs</sub> from the as-separated state after PET treatment due to edge passivation, while the pFF of LSMC-separated cells increases by up to +0.3% <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">abs</sub> . On cell level, the combination of TLS and PET allows for a designated area output power density of p <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">out</sub> = 23.5 mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , taking into account an additional 10% rear side irradiance.