X-ray topography characterization of gallium nitride substrates for power device development
Balaji Raghothamachar, Yafei Liu, Hongyu Peng, Tuerxun Ailihumaer, Michael Dudley, F. Shahedipour‐Sandvik, Kenneth A. Jones, Andrew Armstrong, Andrew A. Allerman, Jung Han, Houqiang Fu, Kai Fu, Yuji Zhao
Topics & Concepts
DislocationMaterials scienceGallium nitrideEpitaxyBurgers vectorSynchrotronPartial dislocationsCrystallographyOpticsCondensed matter physicsNanotechnologyLayer (electronics)Composite materialChemistryPhysicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesMetal and Thin Film Mechanics