Atomic site-targeted doping in Ti2FeNiSb2 double half-Heusler alloys: zT improvement via selective band engineering and point defect scattering
Rahidul Hasan, Seungki Jo, Wei Shi, Seung Yong Lee, Won‐Seon Seo, Vaskuri C. S. Theja, Vellaisamy A. L. Roy, Kyung Tae Kim, Sang‐il Kim, Sung Wng Kim, Hyun‐Sik Kim, Kyu Hyoung Lee
Topics & Concepts
DopingSeebeck coefficientThermoelectric effectCondensed matter physicsMaterials scienceThermal conductivityElectrical resistivity and conductivityPhonon scatteringThermoelectric materialsFigure of meritHeusler compoundDegenerate semiconductorElectronic band structureElectronic structureOptoelectronicsPhysicsThermodynamicsComposite materialQuantum mechanicsAdvanced Thermoelectric Materials and DevicesHeusler alloys: electronic and magnetic properties2D Materials and Applications