A perovskite/porous GaN crystal hybrid structure for ultrahigh sensitivity ultraviolet photodetectors
Qiubo Li, Guangxia Liu, Jiaoxian Yu, Guodong Wang, Shouzhi Wang, Tao Cheng, Chengmin Chen, Lei Liu, Jia‐Yue Yang, Xiangang Xu, Lei Zhang
Abstract
In this paper, an ultra-high sensitivity MAPbBr 3 /NP GaN hybrid structure device was fabricated for the first time with a high current on/off ratio of about 5000 and fast response speeds of 0.21/0.44 s.
Topics & Concepts
Materials sciencePhotodetectorUltravioletOptoelectronicsSensitivity (control systems)Perovskite (structure)PorosityChemical engineeringComposite materialElectronic engineeringEngineeringPerovskite Materials and ApplicationsGa2O3 and related materialsGaN-based semiconductor devices and materials