Litcius/Paper detail

FDTD-Based Optimization of Geometrical Parameters and Material Properties for GaAs-Truncated Nanopyramid Solar Cells

D.V. Prashant, Dip Prakash Samajdar, Zahra Arefinia

2021IEEE Transactions on Electron Devices44 citationsDOI

Abstract

Solar cells (SCs) based on semiconductor nanostructures with the distinctive potential of significant savings in material and effective control over light trapping and scattering processes provide a pathway to low-cost and high-efficiency next-generation SCs. To realize efficient light harvesting and reduced reflection and transmission loss of the nanostructures, the geometrical parameters and material properties must be deliberately optimized. In this article, for SCs based on vertically aligned GaAs-truncated nanopyramids, using the 3-D finite-difference time-domain (FDTD) method, we have examined the optimization study of geometrical and material parameters, including base-width, period, top-surface flatness, carrier mobility and lifetime, doping concentration, and surface recombination, to achieve absorption enhancement and in turn optimum photovoltaicparameters. The optimized structure has exhibited an efficiency of 19.16% despite considering low carrier mobility of 1000 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> V <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> s <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> and lifetime of 3 nanoseconds, with heavily doped core (~4 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">17</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) and substrate (~1 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">19</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> ) and surface recombination velocity of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> cm/s at the contacts.

Topics & Concepts

PhysicsMaterials scienceOpticsOptoelectronicsTopology (electrical circuits)CombinatoricsMathematicsNanowire Synthesis and ApplicationsGaN-based semiconductor devices and materialsThin-Film Transistor Technologies