Growth and characterization of metalorganic vapor-phase epitaxy-grown β-(Al <sub>x</sub> Ga<sub>1−x </sub>)<sub>2</sub>O<sub>3</sub>/β-Ga<sub>2</sub>O<sub>3</sub> heterostructure channels
Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy
Abstract
Abstract We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown β -(Al x Ga 1− x ) 2 O 3 / β -Ga 2 O 3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped β -(Al x Ga 1– x ) 2 O 3 barrier. The electron channel characteristics are studied using transfer length method, capacitance–voltage and Hall measurements. A Hall sheet charge density of 1.06 × 10 13 cm −2 and a mobility of 111 cm 2 V −1 s −1 is measured at room temperature. The fabricated transistor showed a peak current of 22 mA mm −1 and an on–off ratio of 8 × 10 6 . A sheet resistance of 5.3 kΩ/square is measured at room temperature, which includes contribution from a parallel channel in β -(Al x Ga 1– x ) 2 O 3 .