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Demonstration of 155 Gbaud PAM4 and PAM6 EML with Narrow High-Mesa EA Modulator for 400 Gbps per Lane Transmission

Asami Uchiyama, Shinya Okuda, Toshiya Tsuji, Yohei Hokama, Mizuki Shirao, Kenichi Abe, Takeshi Yamatoya, Yasuhiro Yamauchi

202415 citationsDOI

Abstract

We experimentally demonstrated 400 Gbps-per-lane EML with narrow high-mesa EA modulator. TDECQ less than 3.3 dB at 310 Gbps (155 Gbaud PAM4) and clear eye diagram at 400 Gbps (155 Gbaud PAM6) were achieved.

Topics & Concepts

Transmission (telecommunications)MesaComputer scienceElectronic engineeringOpticsPhysicsTelecommunicationsEngineeringProgramming languageAdvancements in PLL and VCO TechnologiesSemiconductor materials and devicesVLSI and Analog Circuit Testing
Demonstration of 155 Gbaud PAM4 and PAM6 EML with Narrow High-Mesa EA Modulator for 400 Gbps per Lane Transmission | Litcius