Optoelectronic Memristive Synapse Behavior for the Architecture of Cu<sub>2</sub>ZnSnS<sub>4</sub>@BiOBr Embedded in Poly(methyl methacrylate)
Xiaofei Dong, Siyuan Li, Hao Sun, Lijuan Jian, Wenbin Wei, Jianbiao Chen, Yun Zhao, Jiangtao Chen, Xuqiang Zhang, Yan Li
Abstract
The great potential of artificial optoelectronic devices that are capable of mimicking biosynapse functions in brain-like neuromorphic computing applications has aroused extensive interest, and the architecture design is decisive yet challenging. Herein, a new architecture of p-type Cu 2 ZnSnS 4 @BiOBr nanosheets embedded in poly(methyl methacrylate) (PMMA) films (CZTS@BOB-PMMA) is presented acting as a switching layer, which not only shows the bipolar resistive switching features (SET/RESET voltages, ∼ −0.93/+1.35 V; retention, >10 4 s) and electrical- and near-infrared light-induced synapse plasticity but also demonstrates electrical-driven excitatory postsynaptic current, spiking-time-dependent plasticity, paired pulse facilitation, long-term plasticity, long- and short-term memory, and “learning–forgetting–learning” behaviors. The approach is a rewarding attempt to broaden the research of optoelectric controllable memristive devices for building neuromorphic architectures mimicking human brain functionalities.