Simulation Study of Novel Charge-Plasma Based ArcTFET for Sensing the Breast Cancer Biomarker (C-erbB-2) in Serum
Navaneet Kumar Singh, Rajib Kar, Durbadal Mandal
Abstract
In this work, a novel design of ArcTFET based on Charge-Plasma and Gate-Stack (CP-GS-ArcTFET) is proposed for the first time. The precise detection of breast cancer biomarker (C-erbB-2) through serum should not be limited by HEMT devices but should be explored with other novel devices also. In this regard, investigation in above-mentioned device is carried out for the detection of C-erbB-2 protein. In CP-GS-ArcTFET, various central angles ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\theta $ </tex-math></inline-formula> ) are considered for observing the electrical parameters e.g., drain current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\text {d}}$ </tex-math></inline-formula> ), threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {T}}$ </tex-math></inline-formula> ), and subthreshold slope (SS). The transconductance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{g}_{\text {m}}$ </tex-math></inline-formula> ), its derivatives ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{g}_{\text {m2}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{g}_{\text {m3}}$ </tex-math></inline-formula> ), and analog performance indicators such as cut-off-frequency ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{f}_{\text {T}}$ </tex-math></inline-formula> ), gain-bandwidth-product (GBP), intrinsic-device-delay ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau $ </tex-math></inline-formula> ), and transconductance-frequency-product (TFP) have also been analysed for these <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\theta \text{s}$ </tex-math></inline-formula> . The drain current, SS, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {T}}$ </tex-math></inline-formula> has been improved with the central angles. In the proposed device, the concept of charge equivalence of C-erbB-2 with its quantities (in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{g}$ </tex-math></inline-formula> /ml) is used for analysing sensitivity in Silvaco ATLAS TCAD. The device sensing is observed by changing C-erbB-2 concentrations in serum. The sensitivity concerning ON-current, OFF-current and current-ratio has been addressed for healthy and diseased individuals. The impact of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\theta $ </tex-math></inline-formula> on sensitivity is also observed. With increasing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\theta $ </tex-math></inline-formula> , the sensitivities <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{S}_{\text {ON}}$ </tex-math></inline-formula> and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{S}_{\text {OFF}}$ </tex-math></inline-formula> decrease; whereas, the sensitivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{S}_{\text {current ratio}}$ </tex-math></inline-formula> increases for the C-erbB-2 concentration of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$210 \mu \text{g}$ </tex-math></inline-formula> /ml. The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\text {ON}}/\text{I}_{\text {OFF}}$ </tex-math></inline-formula> and SS in CP-GS-ArcTFET are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${4.5} \times {10}^{{9}}$ </tex-math></inline-formula> and 35.97 mV/decade, respectively. The capability of CP-GS-ArcTFET to boost the performance is established with the decrease in leakage, enhancing <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\text {ON}}/\text{I}_{\text {OFF}}$ </tex-math></inline-formula> , steeper SS with the aids of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\text {T}}$ </tex-math></inline-formula> reduction.