Modeling, Simulation and Performance Analysis of Drain Current for Below 10 nm Channel Length Based Tri-Gate FinFET
Suparna Panchanan, Reshmi Maity, Srimanta Baishya, N. P. Maity
Topics & Concepts
Materials scienceTransconductanceDrain-induced barrier loweringChannel length modulationOptoelectronicsConductanceSubthreshold swingTechnology CADField-effect transistorEquivalent series resistanceTransistorCurrent (fluid)Gate oxideGate dielectricSubthreshold slopeElectrical engineeringCondensed matter physicsVoltageEngineeringPhysicsEngineering drawingCADAdvancements in Semiconductor Devices and Circuit DesignIntegrated Circuits and Semiconductor Failure AnalysisElectrostatic Discharge in Electronics