Multi-pulse atomic layer deposition of p-type SnO thin films: growth processes and the effect on TFT performance
Daisy Gomersall, Kham M. Niang, James D. Parish, Zhuotong Sun, Andrew L. Johnson, Judith L. MacManus‐Driscoll, Andrew J. Flewitt
Abstract
P-type SnO thin films have been deposited using multiple pulses of a novel Sn( ii ) precursor per ALD cycle. The study looks at the effect on TFT performance and AFM analysis has explored the change in the growth processes during deposition.
Topics & Concepts
Atomic layer depositionMaterials scienceThin-film transistorThin filmDeposition (geology)Layer (electronics)OptoelectronicsAtomic force microscopyNanotechnologyLayer by layerChemical engineeringBiologyEngineeringSedimentPaleontologyZnO doping and propertiesThin-Film Transistor TechnologiesSemiconductor materials and devices