A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications
Mehrzad Karamimanesh, Ebrahim Abiri, Kourosh Hassanli, Mohammad Reza Salehi, Abdolreza Darabi
Topics & Concepts
Static random-access memoryReliability (semiconductor)Computer sciencePower (physics)Noise marginElectronic engineeringLine (geometry)Energy consumptionMargin (machine learning)VoltagePower consumptionElectronic circuitEnergy (signal processing)Electrical engineeringComputer hardwareEngineeringTransistorMathematicsPhysicsGeometryMachine learningStatisticsQuantum mechanicsLow-power high-performance VLSI designVLSI and FPGA Design TechniquesRadiation Effects in Electronics