Record‐High Thermoelectric Performance in Al‐Doped ZnO via Anderson Localization of Band Edge States
Illia Serhiienko, Andrei Novitskii, Fabian Garmroudi, Еvgeny Kolesnikov, Е. В. Чернышова, Т. В. Свиридова, Aleksei Bogach, А. И. Воронин, Nguyễn Duy Hiếu, Naoyuki Kawamoto, E. Bauer, Vladimir Khovaylo, Takao Mori
Abstract
Abstract Oxides are of interest for thermoelectrics due to their high thermal stability, chemical inertness, low cost, and eco‐friendly constituting elements. Here, adopting a unique synthesis route via chemical co‐precipitation at strongly alkaline conditions, one of the highest thermoelectric performances for ZnO ceramics ( 21.5 µW cm −1 K −2 and 0.5 at 1100 K in ) is achieved. These results are linked to a distinct modification of the electronic structure: charge carriers become trapped at the edge of the conduction band due to Anderson localization, evidenced by an anomalously low carrier mobility, and characteristic temperature and doping dependencies of charge transport. The bi‐dimensional optimization of doping and carrier localization enable a simultaneous improvement of the Seebeck coefficient and electrical conductivity, opening a novel pathway to advance ZnO thermoelectrics.