Electromechanical field effects in InAs/GaAs quantum dots based on continuum <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si20.svg"><mml:mrow><mml:mover accent="true"><mml:mrow><mml:mi>k</mml:mi></mml:mrow><mml:mrow><mml:mo>→</mml:mo></mml:mrow></mml:mover><mml:mo>·</mml:mo><mml:mover accent="true"><mml:mrow><mml:mi>p</mml:mi></mml:mrow><mml:mrow><mml:mo>→</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:math> and atomistic tight-binding methods
Daniele Barettin, Alessandro Pecchia, Matthias Auf der Maur, Aldo Di Carlo, Benny Lassen, Morten Willatzen
Topics & Concepts
Tight bindingQuantum dotCondensed matter physicsValence (chemistry)Wurtzite crystal structurePhysicsElectronic structureQuantum mechanicsDiffractionSemiconductor Quantum Structures and DevicesGaN-based semiconductor devices and materialsQuantum and electron transport phenomena