A dC/dV Measurement for Quantum-Dot Light-Emitting Diodes
Jingrui Ma, Haodong Tang, Xiangwei Qu, Guohong Xiang, Siqi Jia, Pai Liu, Kai Wang, Xiao Wei Sun
Abstract
We present dC / dV analysis based on the capacitance-voltage ( C – V ) measurement of quantum-dot light-emitting diodes (QLEDs), and find that some key device operating parameters (electrical and optical turn-on voltage, peak capacitance, maximum efficiency) can be directly related to the turning points and maximum/minimum of the dC / dV (versus voltage) curve. By the dC / dV study, the behaviors such as low turn-on voltage, simultaneous electrical and optical turn-on process, and carrier accumulation during the device aging can be well explained. Moreover, we perform the C – V and dC / dV measurement of aged devices, and confirm that our dC / dV analysis is correct for them. Thus, our dC / dV analysis method can be applied universally for QLED devices. It provides an in-depth understanding of carrier dynamics in QLEDs through simple C – V measurement.