Nano Device Simulator—A Practical Subband-BTE Solver for Path-Finding and DTCO
Zlatan Stanojević, Chen-Ming Tsai, G. Strof, F. Mitterbauer, O. Baumgartner, C. Kernstock, M. Karner
Abstract
We present an in-depth discussion on the subband Boltzmann transport (SBTE) methodology, its evolution, and its application to the simulation of nanoscale MOSFETs. The evolution of the method is presented from the point of view of developing a commercial general-purpose SBTE solver, the GTS nano device simulator (NDS). We show a wide range of applications SBTE is suited for, including state-of-the-art nonplanar and well-established planar technologies. It is demonstrated how SBTE can be employed both as a path-finding tool and a fundamental component in a DTCO-flow.
Topics & Concepts
SolverPath (computing)PlanarComputer scienceSimulationComputational scienceNano-Range (aeronautics)Materials scienceAerospace engineeringEngineeringComputer graphics (images)Operating systemProgramming languageComposite materialAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesElectrostatic Discharge in Electronics