Litcius/Paper detail

Impact of band gap and gate dielectric engineering on novel Si0.1Ge0.9-GaAs lateral N-type charge plasma based JLTFET

Kaushal Kumar, S. C. Sharma

2022Microelectronics Journal26 citationsDOI

Topics & Concepts

IntermodulationDielectricMaterials scienceLinearityOptoelectronicsDistortion (music)PlasmaElectrical engineeringPhysicsEngineeringCMOSAmplifierQuantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesFerroelectric and Negative Capacitance Devices
Impact of band gap and gate dielectric engineering on novel Si0.1Ge0.9-GaAs lateral N-type charge plasma based JLTFET | Litcius