Study of the influence of gamma irradiation on long-term reliability of SiC MOSFET
Xiaowen Liang, Jiangwei Cui, Qiwen Zheng, Jinghao Zhao, Xue‐Feng Yu, Jing Sun, Dan Zhang, Qi Guo
Abstract
A study on the long-term reliability of SiC MOSFET in different operating biases under total ionizing dose radiation environment was carried out. The relationship between radiation-induced degradation of electrical parameters and time-dependent dielectric breakdown characteristics was analyzed through the energy band theory and feedback runaway model.
Topics & Concepts
MOSFETReliability (semiconductor)Ionizing radiationTerm (time)IrradiationRadiationGamma irradiationMaterials scienceDegradation (telecommunications)OptoelectronicsElectronic engineeringPhysicsElectrical engineeringNuclear physicsEngineeringThermodynamicsVoltageTransistorPower (physics)Quantum mechanicsSilicon Carbide Semiconductor TechnologiesRadiation Effects in ElectronicsSemiconductor materials and devices