Inkjet-printed bipolar resistive switching device based on Ag/ZnO/Au structure
Hongrong Hu, Alexander Scholz, Surya Abhishek Singaraju, Yushu Tang, Gabriel Cadilha Marques, Jasmin Aghassi‐Hagmann
Abstract
In this Letter, we report an inkjet-printed resistive switching device based on an Ag/ZnO/Au structure. The device exhibits bipolar resistive switching behavior, a low operation voltage of about 0.7 V, a high on/off ratio of 107, a long retention time exceeding 104 s, and good endurance. The conduction mechanism of the device in low and high resistive states was studied and showed good consistency with the theory of Ohmic and space charge limited conduction mechanisms, respectively.
Topics & Concepts
Ohmic contactThermal conductionMaterials scienceOptoelectronicsResistive touchscreenSpace chargeVoltageResistive random-access memoryNanotechnologyElectrical engineeringLayer (electronics)Composite materialElectronPhysicsQuantum mechanicsEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering