Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications
G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh, Nour El I. Boukortt, Sharif Md. Sadaf, Hieu Pham Trung Nguyen
Topics & Concepts
High-electron-mobility transistorMaterials scienceBreakdown voltageOptoelectronicsGallium nitrideSilicon carbideSapphireTransistorSubstrate (aquarium)VoltageElectrical engineeringNanotechnologyMetallurgyOpticsPhysicsLayer (electronics)OceanographyGeologyEngineeringLaserGa2O3 and related materialsGaN-based semiconductor devices and materialsZnO doping and properties