Polarity-dependent threshold voltage shift in ovonic threshold switches: Challenges and opportunities
Taras Ravsher, R. Degraeve, Daniele Garbin, A. Fantini, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas’ev, Romain Delhougne, Gouri Sankar Kar
Abstract
In this paper we investigate the operation of Si-Ge-As-Te Ovonic Threshold Switch (OTS) selectors under bipolar pulses. We observe that the threshold voltage increases noticeably if the previous pulse had opposite polarity. This effect is consistently present under different test conditions and persists for a long time (>1000s). We also investigate its impact on 1S1R operation, and discuss possible applications, such as OTS-only memory element.
Topics & Concepts
Threshold voltagePolarity (international relations)Materials scienceNon-volatile memoryOptoelectronicsVoltageFast switchingLogic gateElectrical engineeringComputer scienceElectronic engineeringEngineeringChemistryTransistorBiochemistryCellPhase-change materials and chalcogenidesPhotonic and Optical DevicesAdvanced Memory and Neural Computing