Metal-assisted chemical etching beyond Si: applications to III–V compounds and wide-bandgap semiconductors
Sami Znati, Juwon Wharwood, Kyle G. Tezanos, Xiuling Li, Parsian K. Mohseni
Abstract
, and Ge material systems. We further review a series of active and passive devices enabled by MacEtch, including light-emitting diodes (LEDs), field-effect transistors (FETs), optical gratings, sensors, capacitors, photodiodes, and solar cells. By reviewing demonstrated control of morphology, optimization of etch conditions, and catalyst-material combinations, we aim to distill the current understanding of beyond-Si MacEtch mechanisms and to provide a bank of reference recipes to stimulate progress in the field.
Topics & Concepts
Materials scienceSemiconductorIsotropic etchingBand gapMetalEtching (microfabrication)NanotechnologyOptoelectronicsMetallurgyLayer (electronics)Semiconductor materials and devicesNanowire Synthesis and ApplicationsZnO doping and properties