Engineering SiO<sub>2</sub> Nanoparticles: A Perspective on Chemical Mechanical Planarization Slurry for Advanced Semiconductor Processing
Ganggyu Lee, Kangchun Lee, Seho Sun, Taeseup Song, Ungyu Paik
Abstract
Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles and chemical interaction in slurry to remove materials from the surface of films. With advancements in semiconductor device technology applying various materials and structures, SiO2 (silica) nanoparticles are the most chosen abrasives in CMP slurries. Therefore, understanding and developing silica nanoparticles are crucial for achieving CMP performance, such as removal rates, selectivity, decreasing defects, and high uniformity and flatness. However, despite the abundance of reviews on silica nanoparticles, there is a notable gap in the literature addressing their role as abrasives in CMP slurries. This review offers an in-depth exploration of silica nanoparticle synthesis and modification methods detailing their impact on nanoparticles characteristics and CMP performance. Further, we also address the unique properties of silica nanoparticles, such as hardness, size distribution, and surface properties, and the significant contribution of silica nanoparticles to CMP results. This review is expected to interest researchers and practitioners in semiconductor manufacturing and materials science.