Design and analysis of normally-off GaN-HEMT using β-Ga2O3 buffer for low-loss power converter applications
A. Revathy, J. Vijaya Kumar, P. Murugapandiyan, Mohd Wasim, K. Nirmala Devi, N. Ramkumar
Topics & Concepts
High-electron-mobility transistorTransconductanceMaterials scienceBreakdown voltageOptoelectronicsSilicon carbideLeakage (economics)Wide-bandgap semiconductorGallium nitrideElectrical engineeringVoltageTransistorNanotechnologyEngineeringLayer (electronics)EconomicsMetallurgyMacroeconomicsGa2O3 and related materialsGaN-based semiconductor devices and materialsSemiconductor materials and devices