Trap Dynamics Model Explaining the R<sub>ON</sub> Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs
Nicolò Zagni, Alessandro Chini, Francesco Maria Puglisi, Paolo Pavan, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, G. Verzellesi
Abstract
In this paper, we present simulation results that reproduce stress and recovery experiments in Carbon-doped power GaN MOS-HEMTs and explain the associated R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> increase and decrease as the result of the emission, redistribution and re-trapping of holes within the Carbon-doped buffer. The proposed model can straightforwardly clarify the beneficial impact of the recently proposed p-type drain contact on R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</sub> degradation as being a consequence of enhanced hole trapping and reduced negative trapped charge within the buffer during stress.