Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity
Xuanwu Kang, Yingkui Zheng, Hao Wu, Wei Ke, Yue Sun, Guoqi Zhang, Xinyu Liu
Abstract
Thin-barrier gated-edge termination AlGaN/GaN Schottky barrier diode with low reverse leakage and high turn-on uniformity, Kang, Xuanwu, Zheng, Yingkui, Wu, Hao, Wei, Ke, Sun, Yue, Zhang, Guoqi, Liu, Xinyu
Topics & Concepts
OptoelectronicsSchottky barrierLeakage (economics)Reverse leakage currentMaterials scienceSchottky diodeEnhanced Data Rates for GSM EvolutionDiodeChemistryTelecommunicationsComputer scienceMacroeconomicsEconomicsGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesSemiconductor materials and devices