Self-Driven Broadband Photodetectors Based on MoSe<sub>2</sub>/FePS<sub>3</sub> van der Waals n–p Type-II Heterostructures
Juanmei Duan, Phanish Chava, Mahdi Ghorbani‐Asl, Yangfan Lu, Denise Erb, Liang Hu, Ahmad Echresh, L. Rebohle, Artur Erbe, Arkady V. Krasheninnikov, M. Helm, Y. J. Zeng, Shengqiang Zhou, Sławomir Prucnal
Abstract
Two-dimensional (2D) van der Waals materials with broadband optical absorption are promising candidates for next-generation UV–vis–NIR photodetectors. FePS3, one of the emerging antiferromagnetic van der Waals materials with a wide bandgap and p-type conductivity, has been reported as an excellent candidate for UV optoelectronics. However, a high sensitivity photodetector with a self-driven mode based on FePS3 has not yet been realized. Here, we report a high-performance and self-powered photodetector based on a multilayer MoSe2/FePS3 type-II n–p heterojunction with a working range from 350 to 900 nm. The presented photodetector operates at zero bias and at room temperature under ambient conditions. It exhibits a maximum responsivity (Rmax) of 52 mA W–1 and an external quantum efficiency (EQEmax) of 12% at 522 nm, which are better than the characteristics of its individual constituents and many other photodetectors made of 2D heterostructures. The high performance of MoSe2/FePS3 is attributed to the built-in electric field in the MoSe2/FePS3 n–p junction. Our approach provides a promising platform for broadband self-driven photodetector applications.