Chemical Synthesis and Integration of Highly Conductive PdTe<sub>2</sub> with Low‐Dimensional Semiconductors for p‐Type Transistors with Low Contact Barriers
Jingying Zheng, Tingting Miao, Rui Xu, Xiaofan Ping, Yueyang Wu, Zhixing Lu, Ziming Zhang, Dake Hu, Lina Liu, Qi Zhang, Dawei Li, Zhihai Cheng, Weigang Ma, Liming Xie, Liying Jiao
Abstract
Abstract Low‐dimensional semiconductors provide promising ultrathin channels for constructing more‐than‐Moore devices. However, the prominent contact barriers at the semiconductor–metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p‐type field‐effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe 2 with various low‐dimensional semiconductors. The 2D PdTe 2 synthesized through a quasi‐liquid process exhibits high electrical conductivity (≈4.3 × 10 6 S m −1 ) and thermal conductivity (≈130 W m −1 K −1 ), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe 2 electrodes with desired geometry can be synthesized directly on 2D MoTe 2 and other semiconductors to form high‐performance p‐type FETs without any further treatment. The chemically derived atomically ordered PdTe 2 –MoTe 2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe 2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components.