Review of molecular layer deposition process and application to area selective deposition via graphitization
GeonHo Baek, Hae Lin Yang, Gi-Beom Park, Jin‐Seong Park
Abstract
Abstract As the patterning technology used for manufacturing highly integrated devices continues to develop in the current semiconductor market, sophisticated technology nodes of 5 nm or smaller are now required. Area selective deposition (ASD) is a promising technological alternative to traditional top-down methods, and works by reducing edge placement error and creating self-alignment. A new strategic material is being studied that would allow the qualified molecular layer deposition (MLD) process with its highly conformal deposition to be applied to ASD as an inhibitor. Metalcones can be manufactured using an aromatic ring as an organic precursor. The graphitic carbonization then proceeds under high-temperature annealing, and the inhibition property can be activated by removing surface functional groups. The characteristics of feasible patterning appear as metal elements in the thin film are removed during the annealing process, especially with graphitic carbon. In this review, we introduce the potential application of MLD materials in the development of inhibitors for advanced ASD.