Rationally Designed Versatile Heterostructures Consisted of Two-Dimensional Goldene and MXene Sc<sub>2</sub>CF<sub>2</sub>
Chương V. Nguyen, Chuong V. Nguyen, Pham T. Truong, Huynh V. Phuc, Cuong Q. Nguyen, Cuong Q. Nguyen, Nguyen T. Hiep, Nguyen N. Hieu
Abstract
The rational design of two-dimensional (2D) metal–semiconductor (M–S) heterostructures through contact engineering is crucial for the development of next-generation nanoelectronic devices. In this Letter, van der Waals design strategies were employed to explore the contact characteristics between goldene and MXene Sc 2 CF 2 . Our findings reveal that n-type Schottky contacts are formed across all goldene/Sc 2 CF 2 heterostructures. Notably, this heterostructure exhibits reversible switching between n- and p-type Schottky contacts and can be tuned from Schottky to ohmic contacts via electric gating and vertical strain. Furthermore, goldene/Sc 2 CF 2 exhibits a low tunneling specific resistivity of 2.80 × 10 –10 Ω cm 2, indicating its excellent charge injection efficiency. These findings offer valuable theoretical guidance for the design and optimization of goldene-based devices, such as field-effect transistors (FETs) and photodetectors.