Femtosecond-laser-assisted high-aspect-ratio nanolithography in lithium niobate
Tianxin Wang, Cheng Xiaoyan, Xuan Li, Jianan Ma, Shuo Yan, Xueli Hu, Kai Qi, Weiwen Fan, Manman Liu, Xiaoyi Xu, Xiaomei Lü, Xiaoshun Jiang, Yong Zhang
Abstract
, which is enhanced by a factor of ∼660 in comparison to previous reports without laser irradiation. Such high selectivity in chemical etching helps realize high-performance maskless nanolithography in lithium niobate. In the experiment, we have fabricated high-quality LN nanohole arrays. The nanohole size reaches ∼100 nm and its aspect ratio is above 40 : 1. The minimal period of the LN hole array is 300 nm. Our work paves a way to fabricate LN nano-integrated devices for advanced optic and electronic applications.
Topics & Concepts
FemtosecondLithium niobateMaterials scienceNanolithographyLaserLithium (medication)OptoelectronicsNanotechnologyAspect ratio (aeronautics)OpticsFabricationPhysicsPathologyMedicineAlternative medicineEndocrinologyPhotorefractive and Nonlinear OpticsLaser Material Processing TechniquesPhotonic and Optical Devices