Modeling and spectroscopy of ovonic threshold switching defects
R. Degraeve, Taras Ravsher, Shoichi Kabuyanagi, A. Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar
Abstract
This paper presents a two-state model for OTS defects with a field and temperature-dependent transition. Switching transients of OTS selectors are simulated and the dependence of the threshold voltage on the relaxation time is modeled. A spectroscopic technique to access the physical defect properties is developed and demonstrated on SiGeAsTe.
Topics & Concepts
Materials scienceThreshold voltageSpectroscopyRelaxation (psychology)OptoelectronicsVoltageField (mathematics)Condensed matter physicsElectronic engineeringElectrical engineeringPhysicsTransistorEngineeringMathematicsSocial psychologyPsychologyQuantum mechanicsPure mathematicsPhase-change materials and chalcogenidesThin-Film Transistor TechnologiesSemiconductor materials and interfaces