High-Performance Dual-Mode Solar-Blind Sensor of a Si-Doped <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Trench Schottky Photodiode
Weiyu Jiang, Zeng Liu, Shan Li, Zuyong Yan, Chengling Lu, Peigang Li, Yufeng Guo, Weihua Tang
Abstract
In this work, a Si-doped β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> trench Schottky photodiode has been designed and fabricated. This photodiode works as a dual-mode solar-blind ultraviolet sensor with a photo-to-dark current ratio (PDCR) of 3.93×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> , a responsivity (R) of 152.63 A/W, an external quantum efficiency (EQE) of 74653%, rise and decay time of 0.06 s and 0.06 s, under the irradiation of 254 nm ultraviolet light with intensity of 200 μW·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . Moreover, it has the potential to be a self-powered photodetector at zero bias. In general, this trench Schottky contact design has a good developing prospect in the field of ultraviolet solar-blind detection with high performances.