Litcius/Paper detail

Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon

Xuefeng Han, Xin Liu, Satoshi Nakano, Koichi Kakimoto

2020Journal of Crystal Growth14 citationsDOI

Topics & Concepts

DopantSiliconElectrical resistivity and conductivityNatural convectionDiffusionMechanicsMaterials scienceConvectionFlow (mathematics)Rotation (mathematics)ChemistryMineralogyCondensed matter physicsThermodynamicsAnalytical Chemistry (journal)DopingPhysicsGeometryMetallurgyOptoelectronicsMathematicsQuantum mechanicsChromatographySolidification and crystal growth phenomenaSilicon and Solar Cell TechnologiesFluid Dynamics and Thin Films
Numerical analysis of dopant concentration in 200 mm (8 inch) floating zone silicon | Litcius