Low Specific On-Resistance and Low Leakage Current β-Ga<sub>2</sub>O<sub>3</sub> (001) Schottky Barrier Diode through Contact Pre-Treatment
Hu Chen, Hengyu Wang, Ce Wang, Kuang Sheng
Abstract
In this paper, We illustrate three different contact pre-treatment methods during the Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBD fabrication, including F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> plasma, organic (Acetone) and Chlorine (HCl) pre-treatment. HCl pre-treatment SBD shows the highest BFOM (121 MW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) among ever reported Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBDs without special termination design, rendering a low specific on-resistance of 2.05 mΩ•cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Leakage current at breakdown voltage (492V) of organic pre-treatment SBD is significantly reduced to 9.38e-6 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Moreover, post metal annealing (PMA) can also improve the Schottky interface quality and realize high-performance Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> SBDs.