Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array
Tae‐Hyeon Kim, Hussein Nili, Min‐Hwi Kim, Kyung Kyu Min, Byung‐Gook Park, Hyungjin Kim
Abstract
In this Letter, we present reset-voltage-dependent precise tuning operation of TiOx/Al2O3-based memristive devices. For the high resistance state (HRS) with high reset voltage, abrupt set operations are observed with a large variation, while the HRS obtained by low reset voltage provides gradual and uniform switching behaviors. The improvement of gradual switching and the programming accuracy are analyzed regarding cycle-to-cycle as well as device-to-device variations. We believe that these results can be applied to operate TiOx/Al2O3-based memristors in areas requiring highly accurate tuning characteristics.
Topics & Concepts
Reset (finance)MemristorCrossbar switchVoltageMaterials scienceComputer scienceSet (abstract data type)OptoelectronicsControl theory (sociology)Electronic engineeringElectrical engineeringEngineeringControl (management)TelecommunicationsFinancial economicsEconomicsArtificial intelligenceProgramming languageAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering