Investigation of the effect of graphene oxide nanoparticles on the structural and dielectric parameters in zinc oxide semiconductors
Merve Horlu, Cevher Kürşat Macit, B. Aksakal, Burak Tanyeri, Fatih Biryan
Abstract
Abstract In this study, pure and 1%, 3% and 5% doped graphene oxide (GO) reinforced zinc oxide (ZnO) nanoparticles were synthesized by sol-gel method. The aim was to improve the electrical and dielectric properties of ZnO semiconductor metal oxide used in many electronic, optoelectronic and electrochemical technologies. FE-SEM, X-ray diffraction (XRD), Raman spectroscopy, energy dispersive spectroscopy and Fourier transform infrared spectroscopy (FT-IR), were used to show the structural and morphological properties of the synthesized ZnO and GO doped ZnO nanoparticles. Impedance analysis was used to study the dielectric properties of the produced nanoparticles. XRD analysis revealed typical peaks of nGO and ZnO nanoparticles. Through the FE-SEM and XRD analysis, it was shown that the ZnO and GO nanopowders were successfully synthesized. The results revealed that ZnO-GO nanoparticles, having good dielectric constant with loss and AC conductivity values, such materials can be a good candidate for solar cells and photovoltaic devices. Graphical Abstract