Fast Gate-Based Readout of Silicon Quantum Dots Using Josephson Parametric Amplification
Simon Schaal, Imtiaz Ahmed, J. A. Haigh, Louis Hutin, Benoît Bertrand, Sylvain Barraud, M. Vinet, C.-M. Lee, N. A. Stelmashenko, Jason W. A. Robinson, Jie‐Ming Qiu, Shay Hacohen-Gourgy, Irfan Siddiqi, M. Fernando González-Zalba, John J. L. Morton
Abstract
Spins in silicon quantum devices are promising candidates for large-scale quantum computing. Gate-based sensing of spin qubits offers a compact and scalable readout with high fidelity, however, further improvements in sensitivity are required to meet the fidelity thresholds and measurement timescales needed for the implementation of fast feedback in error correction protocols. Here, we combine radio-frequency gate-based sensing at 622 MHz with a Josephson parametric amplifier, that operates in the 500-800 MHz band, to reduce the integration time required to read the state of a silicon double quantum dot formed in a nanowire transistor. Based on our achieved signal-to-noise ratio, we estimate that singlet-triplet single-shot readout with an average fidelity of 99.7% could be performed in 1 μs, well below the requirements for fault-tolerant readout and 30 times faster than without the Josephson parametric amplifier. Additionally, the Josephson parametric amplifier allows operation at a lower radio-frequency power while maintaining identical signal-to-noise ratio. We determine a noise temperature of 200 mK with a contribution from the Josephson parametric amplifier (25%), cryogenic amplifier (25%) and the resonator (50%), showing routes to further increase the readout speed.