Impacts of silicon carbide defects on electrical characteristics of SiC devices
Lingling Lai, Yingxin Cui, Yu Zhong, Kuan Yew Cheong, Handoko Linewih, Xiangang Xu, Jisheng Han
Abstract
With more than thirty years of research and development until commercialization, performance, reliability, and robustness of silicon carbide (SiC) based devices have been improved significantly due to drastic reduction in crystal defects from the well-controlled processes of crystal growth and device fabrication. It is crucial to investigate the effects of SiC crystal defects on the electrical characteristics of devices. Here, an up-to-date development of the correlation between crystal defects of SiC with electrical performance of the devices has been reviewed. The effect of defects on the electrical parameters of the device and the failure mechanism are discussed, and the development of SiC in recent years is prospected.