Tailoring the electrical homogeneity, large memory window, and multilevel switching properties of HfO2-based memory through interface engineering
Muhammad Ismail, Chandreswar Mahata, Sungjun Kim
Topics & Concepts
Materials scienceResistive random-access memoryDielectricOptoelectronicsNon-volatile memoryVoltageNitrideOhmic contactThermal conductionElectrodeSchottky diodeNanotechnologyElectrical engineeringLayer (electronics)Composite materialDiodeChemistryEngineeringPhysical chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices