Gamma-Ray Irradiation Induced Dielectric Loss of SiO<sub>2</sub>/Si Heterostructures in Through-Silicon Vias (TSVs) by Forming Border Traps
Guanghui Zhang, Zeng-hui Yang, Xiaoshi Li, Shuairong Deng, Yang Liu, Hang Zhou, Maoyang Peng, Zhengping Fu, Rui Chen, Dechao Meng, Le Zhong, Quanfeng Zhou, Su‐Huai Wei
Abstract
The performance of integrated circuits (ICs) deteriorates under irradiation. It is commonly believed that passive components in the IC such as through-silicon vias (TSVs) are insensitive to radiation damages. However, we find a counterexample by studying the effect of gamma-ray irradiation on a TSV, where its alternating current (AC) properties change significantly due to an emerging dielectric loss peak after irradiation, and the peak shifts toward lower frequencies at higher radiation doses. We propose a mechanism of the observed irradiation effect on the AC properties based on correlations between macroscopic and microscopic phenomena, and the emerging dielectric loss peak is attributed to the formation of a layer of border oxide traps (BTs). The defect-based analysis indicates that the AC dielectric loss due to gamma-ray irradiation is not restricted to TSVs but should also be applicable to other semiconductor devices with Si/SiO 2 interfaces. Our work provides not only an approach for the quantitative characterization of BTs but also a practical approach to resist AC irradiation damage at the circuit or material level.