Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks
Pengfei Jiang, Kunran Xu, Jie Yu, Yannan Xu, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong, Yang Yang, Yan Wang, Qing Luo
Topics & Concepts
Materials scienceFerroelectricityElectrodePolarization (electrochemistry)OptoelectronicsCapacitorTransistorArtificial neural networkNon-volatile memorySwitching timeElectronic engineeringVoltageComputer scienceElectrical engineeringDielectricEngineeringArtificial intelligencePhysicsChemistryPhysical chemistryQuantum mechanicsAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesMXene and MAX Phase Materials