Temperature effect on charge-state transition levels of defects in semiconductors
Shuang Qiao, Yu‐Ning Wu, Xiaolan Yan, Bartomeu Monserrat, Su‐Huai Wei, Bing Huang
Abstract
Intrinsic defects and external impurities are unavoidable in solids and play a central role in determining their fundamental physical properties. Unfortunately, most existing defect theories in semiconductors are built on a temperature-independent approximation. By deriving the basic formulas of temperature-dependent defect level evolution, the authors establish two fundamental rules for the temperature dependence of charge-state transition levels in semiconductors, which could be adopted as guidelines for understanding or optimizing doping behavior in semiconductors at finite temperatures.
Topics & Concepts
SemiconductorImpurityCharge (physics)Condensed matter physicsDopingMaterials scienceStatistical physicsPhysicsQuantum mechanicsOptoelectronicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignElectronic and Structural Properties of Oxides