Short-Circuit Capability Demonstrated for GaN Power Switches
Davide Bisi, J. Gritters, Tsutomu Hosoda, Masamichi Kamiyama, Bill Cruse, Yulu Huang, J. McKay, Geetak Gupta, Rakesh Lal, Carl J. Neufeld, Philip Zuk, Yifeng Wu, P. Parikh, Umesh K. Mishra
Abstract
Short-circuit capability is essential for the adoption of GaN power devices in motor drives for industrial and automotive applications. In this work, we report an innovative solution for GaN power switches to achieve short-circuit withstanding time (SCWT) equal to or greater than 3 micro-seconds with limited increase in on-resistance. We discuss the technology, referred to as Short-Circuit Current Limiter (SCCL) and show the experimental results including static and dynamic Ron, 400-V short-circuit, inductive switching, off-state leakage and 1000-hour high-temperature reverse-bias stress. Thanks to extended SCWT, the SCCL technology allows the industry to adopt conventional short-circuit protection schemes, with sufficient immunity to noise and switching transients.