Characterization of individual charge fluctuators in Si/SiGe quantum dots
Feiyang Ye, Ammar Ellaboudy, Dylan Albrecht, Rohith Vudatha, N. Tobias Jacobson, John M. Nichol
Abstract
Quantum computers are susceptible to noise. In silicon quantum computers, random electrical fluctuations in the semiconductor can disturb qubits based on individual electrons. However, little is known about the causes of these electrical fluctuations. Here, the authors zoom in and study individual charge fluctuators in silicon quantum dots and observe a variety of new phenomena. The results promise to help understand and mitigate charge noise in silicon quantum computers.
Topics & Concepts
Characterization (materials science)Quantum dotCharge (physics)Materials scienceNanotechnologyOptoelectronicsEngineering physicsPhysicsQuantum mechanicsAdvancements in Semiconductor Devices and Circuit DesignSemiconductor Quantum Structures and DevicesSemiconductor materials and devices