A silicon-based PbSe quantum dot near-infrared photodetector with spectral selectivity
Yuanlin Shi, Zhiming Wu, Xiang Dong, Pengyu Chen, Jinquan Wang, Jun Yang, Zihao Xiang, Miao Shen, Yaming Zhuang, Jun Gou, Jun Wang, Yadong Jiang
Abstract
Traditional photodetectors usually respond to photons larger than the bandgap of a photosensitive material. In contrast to traditional photodetectors for broad-spectrum detection, the currently reported PbS/PMMA/PbSe CQD silicon-based photodetectors can detect spectrally selective light sources. This is attributed to two layers with specific functions, a filter layer on top and a photosensitive layer in contact with the silicon channel. Each of the target sources of the device has a selectivity factor of more than 10 against non-target sources. The s-PD (selective photodetector) has three significant advantages: the ability to tunably adjust the detectable spectral range by easily adjusting the size of QDs. The second is using a new architecture to achieve a high-performance selective photodetector, and finally, the ease-of-integration with silicon. The above features enable the device to meet the needs of particular fields such as secure communication, surveillance, and infrared imaging.