Single-Mode High-Speed 1550 nm Wafer Fused VCSELs for Narrow WDM Systems
A. V. Babichev, S. A. Blokhin, A. G. Gladyshev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, N. A. Maleev, V. V. Andryushkin, E. S. Kolodeznyi, Dmitrii V. Denisov, N. V. Kryzhanovskaya, K. O. Voropaev, V. M. Ustinov, A. Yu. Egorov, Hui Li, Si-Cong Tian, Saiyi Han, Georgiy Sapunov, D. Bimberg
Abstract
High power single-mode wafer fused 1550 nm VCSELs with an active region based on InGaAs quantum wells are fabricated. An InP-based optical cavity and two AlGaAs/GaAs distributed Bragg reflector heterostructures were grown by molecular-beam epita oy. The current and optical confinements are provided by a lateral-structured buried tunnel junction with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim ~6~\mu \text{m}$ </tex-math></inline-formula> diameter and etching depth of ~ 20 nm. The VCSELs demonstrate ~ 3.4 mW single-mode continuous-wave output optical power and a threshold current about 2 mA at 20°C. The output optical power exceeds 1 mW at 70°C. A −3dB modulation bandwidth > 13 GHz is obtained at 20°C. Non-return-to-zero data transmission under back-to-back condition of ~ 37 Gbps is shown.